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IRL2203N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C
Reference to 25°C, I D = 1mA
m ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
–––
7.0 V GS = 10V, I D = 60A
10 V GS = 4.5V, I D = 48A
?
?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
160
23
66
––– V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 60A ?
25 V DS = 30V, V GS = 0V
μA
250 V DS = 24V, V GS = 0V, T J = 125°C
100 V GS = 16V
nA
-100 V GS = -16V
60 I D = 60A
14 nC V DS = 24V
33 V GS = 4.5V, See Fig. 6 and 13
––– V DD = 15V
––– I D = 60A
––– R G = 1.8 ?
––– V GS = 4.5V, See Fig. 10 ?
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
7.5 –––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3290 ––– V GS = 0V
1270 ––– V DS = 25V
170 ––– pF ? = 1.0MHz, See Fig. 5
E AS
Single Pulse Avalanche Energy ?
–––
1320 ? 290 ?
mJ I AS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
––– ––– 116 ?
integral reverse
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
MOSFET symbol
showing the
A
G
––– ––– 400
p-n junction diode.
––– ––– 1.2 V T J = 25°C, I S = 60A, V GS = 0V ?
D
S
t rr
Q rr
t on
Notes:
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– 56 84 ns T J = 25°C, I F = 60A
––– 110 170 nC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ 60A, di/dt ≤ 110A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Starting T J = 25°C, L = 0.16mH
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
R G = 25 ? , I AS = 60A, V GS =10V (See Figure 12) ? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175°C .
? Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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